NSVBAS21SLT1G Просмотр технического описания (PDF) - ON Semiconductor
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NSVBAS21SLT1G Datasheet PDF : 3 Pages
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BAS21SLT1G, NSVBAS21SLT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 200 Vdc)
(VR = 200 Vdc, TJ = 150°C)
IR
mAdc
−
0.1
−
100
Reverse Breakdown Voltage
(IBR = 100 mAdc)
V(BR)
250
−
Vdc
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
VF
mV
−
1000
−
1250
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
−
5.0
pF
Reverse Recovery Time
(IF = IR = 30 mAdc, RL = 100 W)
trr
−
50
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
820 W
+10 V
2.0 k
100 mH IF
0.1 mF
50 W OUTPUT
PULSE
GENERATOR
D.U.T.
0.1 mF
tr
tp
t
10%
50 W INPUT
SAMPLING
VR
OSCILLOSCOPE
90%
INPUT SIGNAL
IF
trr
t
iR(REC) = 3.0 mA
IR
OUTPUT PULSE
(IF = IR = 30 mA; MEASURED
at iR(REC) = 3.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 30 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
1200
1000
800
600
400
200
1
1
TA = −55°C
25°C
155°C
10
100
FORWARD CURRENT (mA)
Figure 2. Forward Voltage
1000
7000
6000
5000
4000
3000
6
5
4
3
2
1
0
1
TA = 155°C
TA = 25°C
TA = −55°C
2
5 10 20
50 100 200 300
REVERSE VOLTAGE (V)
Figure 3. Reverse Leakage
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