PMXB350UPE Просмотр технического описания (PDF) - NXP Semiconductors.

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PMXB350UPE

20 V, P-channel Trench MOSFET

NXP Semiconductors. 

NXP Semiconductors

PMXB350UPE

20 V, P-channel Trench MOSFET

-10

ID

(A)

-8

aaa-009335

2.0

a

1.5

aaa-009336

-6

1.0

-4

-2

Tj = 150 °C

Tj = 25 °C

0

0

-1

-2

-3

-4

-5

VGS (V)

VDS > ID × RDSon

Fig. 11. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

0.5

0

-60

0

60

120

180

Tj (°C)

Fig. 12. Normalized drain-source on-state resistance

as a function of junction temperature; typical

values

-1.5

VGS(th)

(V)

-1.0

-0.5

aaa-009276

max

typ

min

103

C

(pF)

102

10

aaa-009277

Ciss

Coss

Crss

0

-60

0

60

ID = -0.25 mA; VDS = VGS

120

180

Tj (°C)

Fig. 13. Gate-source threshold voltage as a function of

junction temperature

1

-10-1

-1

f = 1 MHz; VGS = 0 V

-10

-102

VDS (V)

Fig. 14. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

PMXB350UPE

Product data sheet

All information provided in this document is subject to legal disclaimers.

24 January 2014

© NXP N.V. 2014. All rights reserved

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