PMXB350UPE Просмотр технического описания (PDF) - NXP Semiconductors.

Номер в каталоге

Компоненты Описание

производитель

PMXB350UPE

20 V, P-channel Trench MOSFET

NXP Semiconductors. 

NXP Semiconductors

PMXB350UPE

20 V, P-channel Trench MOSFET

-10

ID

(A)

-1

Limit RDSon = VDS/ID

tp = 10 µs

aaa-009264

tp = 100 µs

tp = 1 ms

-10-1

DC; Tsp = 25 °C

DC; Tamb = 25 °C;

drain mounting pad 6 cm2

tp = 10 ms

-10-2

-10-1

-1

IDM = single pulse

-10

-102

VDS (V)

Fig. 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-

source voltage

9. Thermal characteristics

Table 6.

Symbol

Rth(j-a)

Rth(j-sp)

Thermal characteristics

Parameter

Conditions

thermal resistance

from junction to

ambient

in free air

thermal resistance

from junction to solder

point

Min Typ Max Unit

[1]

-

303 348 K/W

[2]

-

116 134 K/W

-

17

22

K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.

PMXB350UPE

Product data sheet

All information provided in this document is subject to legal disclaimers.

24 January 2014

© NXP N.V. 2014. All rights reserved

4 / 15

Share Link: