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PMXB350UPE Datasheet PDF : 16 Pages
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NXP Semiconductors
PMXB350UPE
20 V, P-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS
drain-source voltage
Tj = 25 °C
VGS
gate-source voltage
ID
drain current
VGS = -4.5 V; Tamb = 25 °C
[1]
VGS = -4.5 V; Tamb = 100 °C
[1]
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
[2]
[1]
Tsp = 25 °C
Tj
junction temperature
Tamb
ambient temperature
Tstg
storage temperature
Source-drain diode
IS
source current
Tamb = 25 °C
[1]
Min Max Unit
-
-20 V
-8
8
V
-
-1.2 A
-
-1
A
-
-5
A
-
360 mW
-
930 mW
-
5680 mW
-55 150 °C
-55 150 °C
-65 150 °C
-
-0.9 A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
120
017aaa123
120
017aaa124
Pder
Ider
(%)
(%)
80
80
40
40
0
- 75
- 25
25
75
125
175
Tj (°C)
Fig. 2. Normalized total power dissipation as a
function of junction temperature
0
- 75
- 25
25
75
125
175
Tj (°C)
Fig. 3. Normalized continuous drain current as a
function of junction temperature
PMXB350UPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 January 2014
© NXP N.V. 2014. All rights reserved
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