DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

NTE328 Просмотр технического описания (PDF) - NTE Electronics

Номер в каталоге
Компоненты Описание
производитель
NTE328 Datasheet PDF : 2 Pages
1 2
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Base–Emitter ON Voltage
Dymanic Characteristics
hFE
VCE(sat)
VBE(sat)
VBE(on)
VCE = 2V, IC = 0.5A
VCE = 2V, IC = 10A
VCE = 2V, IC = 25A
IC = 10A, IB = 1.0A
IC = 25A, IB = 2.5A
IC = 10A, IB = 1.0A
IC = 25A, IB = 2.5A
VCE = 2V, IC = 10A
50 – –
30 – 120
12 – –
– – 1.0 V
– – 1.8 V
– – 1.8 V
– – 2.5 V
– – 1.8 V
Current Gain–Bandwidth Product
Output Capacitance
Switching Characteristics
fT
VCE = 10V, IC = 1A, f = 10MHz, Note 2
Cob VCB = 10V, IE = 0, f = 0.1MHz
40 – – MHz
– – 300 pF
Rise Time
Storage Time
Fall Time
tr
VCC = 80V, IC = 10A, IB1 = 1A, VBE(off) = 6v –
– 0.3 µs
ts
VCC = 80V, IC = 10A, IB1 = IB2 = 1A
– – 1.0 µs
tf
– – 0.25 µs
Note 1. Pulse test: Pulse Width 300µs, Duty Cycle 2%.
Note 2. fT = |hfe| S ftest.
.135 (3.45) Max
.350 (8.89)
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
.040 (1.02)
Emitter
1.187 (30.16)
.215 (5.45)
.430
(10.92)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]