NTE2935 Просмотр технического описания (PDF) - NTE Electronics
Номер в каталоге
Компоненты Описание
производитель
NTE2935 Datasheet PDF : 3 Pages
| |||
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Drain–Source Breakdown Voltage
BVDSS VGS = 0V, ID = 250µA
Breakdown Voltage Temperature
Coefficient
∆V(BR)DSS/ ID = 250µA
∆TJ
Gate Threshold Voltage
VGS(th) VDS = 5V, ID = 250µA
Gate–Source Leakage Forward
IGSS VGS = 30V
Gate–Source Leakage Reverse
IGSS VGS = –30V
Drain–to–Source Leakage Current
IDSS VDS = 500V
VDS = 400V, TC = +125°C
Static Drain–Source ON Resistance RDS(on) VGS = 10V, ID = 3.1A, Note 4
Forward Transconductance
gfs
VDS = 50V, ID = 3.1A, Note 4
Input Capacitance
Ciss VGS = 0V, VDS = 25V, f = 1MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn–On Delay Time
Rise Time
td(on)
tr
VDD = 250V, ID = 8A, RG = 9.1Ω,
Note 4, Note 5
Turn–Off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
Gate–Source Charge
Qg
VGS = 10V, ID = 8A, VDS = 400V,
Qgs
Note 4, Note 5
Gate–Drain (“Miller”) Charge
Qgd
Source–Drain Diode Ratings and Characteristics
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS
(Body Diode)
ISM (Body Diode) Note 1
VSD TJ = +25°C, IS = 6.2A, VGS = 0V, Note 4
trr
TJ = +25°C, IF = 8A, diF/dt = 100A/µs,
Qrr
Note 4
Min Typ Max Unit
500 –
–
V
– 0.66 – V/°C
2.0 – 4.0 V
– – 100 nA
– – –100 nA
– – 10 µA
– – 100 µA
– – 0.85 Ω
– 5.73 – mhos
– 1190 1550 pF
– 150 175 pF
– 166 75 pF
– 18 45 ns
– 22 55 ns
– 83 175 ns
– 30 70 ns
– 57 74 nC
– 7.5 – nC
– 28.4 – nC
– – 6.2 A
– – 34 A
– – 1.4 V
– 370 – ns
– 3.9 – µC
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width = 250µs, Duty Cycle ≤ 2%.
Note 5. Essentially independent of operating temperature.
Share Link: 