NTE6402 Просмотр технического описания (PDF) - NTE Electronics
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NTE6402 Datasheet PDF : 2 Pages
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Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Peak Current
IP VS = 10V, RG = 1MΩ
– – 2 µA
VS = 10V, RG = 10kΩ
– – 5 µA
Offset Voltage
VT VS = 10V, RG = 1MΩ
0.2 – 1.6 V
VS = 10V, RG = 10kΩ
0.2 – 0.6 V
Valley Current
IV VS = 10V, RG = 1MΩ
– – 50 µA
VS = 10V, RG = 10kΩ
70 – – µA
VS = 10V, RG = 200Ω
1.5 – – mA
Anode Gate–Anode Leakage Current IGAO VS = 40V, TA = +25°C
– – 10 nA
VS = 40V, TA = +75°C
– – 100 nA
Gate–Cathode Leakage Current
IGKS VS = 40V, Anode–Cathode Short – – 100 nA
Forward Voltage
VF IF = 50mA
– – 1.5 V
Pulse Output Voltage
VO
6––V
Pulse Voltage Rate of Rise
tr
– – 80 ns
.210
(5.33)
Max
.500
(12.7)
Min
.135 (3.45) Min
Seating
Plane
.021 (.445)
Dia Max
AGK
.100 (2.54)
.050 (1.27)
.140 (3.55) Max
.245
(6.23)
Max
.190 (4.82) Min
.065
(1.65)
.500
(12.7)
Min
AGK
.100 (2.54)
.018 (0.45) Dia Max
.105 (2.67) Max
.205 (5.2) Max
.165 (4.2) Max
.105 (2.67) Max
TO92
.200 (5.08) Max
TO98
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