NE32584C-T1 Просмотр технического описания (PDF) - NEC => Renesas Technology
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NE32584C-T1 Datasheet PDF : 12 Pages
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NE32584C
ELECTRICAL CHARACTERISTICS (TA = 25 qC)
CHARACTERISTIC
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cutoff Voltage
Transconductance
Noise Figure
Associated Gain
SYMBOL
IGSO
IDSS
VGS(off)
gm
NF
Ga
MIN.
20
ð0.2
45
11.0
TYP.
0.5
60
ð0.7
60
0.45
12.5
MAX.
10
90
ð2.0
0.55
UNIT
PA
mA
V
mS
dB
dB
TEST CONDITIONS
VGS = ð3 V
VDS = 2 V, VGS = 0 V
VDS = 2 V, ID = 100 PA
VDS = 2 V, ID = 10 mA
VDS = 2 V, ID = 10 mA, f = 12 GHz
TYPICAL CHARACTERISTICS (TA = 25 qC)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
250
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
200
150
100
50
0
50
100 150 200 250
TA - Ambient Temperature - ¡C
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
VDS = 2 V
60
40
20
0
–2.0
–1.0
0
VGS - Gate to Source Voltage - V
80
VGS = 0 V
60
–0.2 V
40
–0.4 V
20
–0.6 V
–0.8 V
0
1.5
3.0
VDS - Drain to Source Voltage - V
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
24
VDS = 2 V
ID = 10 mA
20
MSG.
16
|S21s|2
12
MAG.
8
0
1
2
3 6 8 10 14 20 30
f - Frequency - GHz
2
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