NE32584C-T1(1998) Просмотр технического описания (PDF) - NEC => Renesas Technology
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NE32584C-T1 Datasheet PDF : 6 Pages
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NE32584C
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
VDS
VGS
IDS
IGRF
TCH
TSTG
PT
PARAMETERS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Channel Temperature
Storage Temperature
Total Power Dissipation
UNITS RATINGS
V
4.0
V
-3.0
mA
IDSS
µA
100
°C
150
°C -65 to +150
mW
165
Note:
1. Operation in excess of any one of these parameters may result in
permanent damage.
TYPICAL NOISE PARAMETERS (TA = 25°C)
VDS = 2 V, ID = 10 mA
FREQ.
NFOPT GA
ΓOPT
(GHz)
(dB) (dB) MAG ANG Rn/50
2
0.29 20.0 0.86
22
0.27
4
0.30 18.3 0.76
45
0.25
6
0.33 16.5 0.69
70
0.18
8
0.36 15.0 0.63
96
0.11
10
0.40 13.6
0.59
122
0.08
12
0.45 12.5
0.54
147
0.04
14
0.54 12.0
0.48
171
0.04
16
0.68 11.8 0.40 -165 0.05
18
0.85 11.5 0.31 -144 0.06
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
150
100
50
0
50
100
150
200
Ambient Temperature, TA (°C)
NOISE FIGURE AND ASSOCIATED GAIN
vs. FREQUENCY
24
VDS = 2 V
ID = 10 mA
20
GA
16
1.0
12
0.5
0
1
8
NF
4
2
4 6 8 10 14 20 30
Frequency, f (GHz)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
80
VGS = 0 V
60
-0.2 V
40
-0.4 V
20
0
-0.6 V
-0.8 V
1.5
3.0
Drain to Source Voltage, VDS (V)
NOISE FIGURE AND ASSOCIATED GAIN
vs. DRAIN CURRENT
VDS = 2 V
f = 12 GHz
14
GA
13
12
2.0
11
1.5
10
1.0
0.5
NF
0
10
20
30
Drain Current, ID (mA)
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