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BAS17 Просмотр технического описания (PDF) - NXP Semiconductors.
Номер в каталоге
Компоненты Описание
производитель
BAS17
Low-voltage stabistor
NXP Semiconductors.
BAS17 Datasheet PDF : 8 Pages
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NXP Semiconductors
Low-voltage stabistor
Product data sheet
BAS17
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
V
F
forward voltage
I
R
reverse current
r
dif
differential resistance
S
F
temperature coefficient
C
d
diode capacitance
CONDITIONS
see Fig.2
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 5 mA
I
F
= 10 mA
I
F
= 100 mA
V
R
= 4 V
I
F
= 0.5 mA
I
F
= 2 mA
I
F
= 1 mA
V
R
= 0 V; f = 1 MHz
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
Note
1. Device mounted on a FR4 printed-circuit board.
CONDITIONS
note 1
MIN. TYP. MAX. UNIT
580
−
660 mV
665
−
745 mV
725
−
805 mV
750
−
830 mV
870
−
960 mV
−
−
5
µ
A
−
120
−
Ω
−
80
−
Ω
−
−
1.8
−
mV/K
−
−
140 pF
VALUE
330
500
UNIT
K/W
K/W
2003 Mar 25
3
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