BAS17 Просмотр технического описания (PDF) - NXP Semiconductors.
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BAS17 Datasheet PDF : 8 Pages
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NXP Semiconductors
Low-voltage stabistor
Product data sheet
BAS17
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
rdif
differential resistance
SF
temperature coefficient
Cd
diode capacitance
CONDITIONS
see Fig.2
IF = 0.1 mA
IF = 1 mA
IF = 5 mA
IF = 10 mA
IF = 100 mA
VR = 4 V
IF = 0.5 mA
IF = 2 mA
IF = 1 mA
VR = 0 V; f = 1 MHz
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
Note
1. Device mounted on a FR4 printed-circuit board.
CONDITIONS
note 1
MIN. TYP. MAX. UNIT
580 −
660 mV
665 −
745 mV
725 −
805 mV
750 −
830 mV
870 −
960 mV
−
−
5
µA
−
120 −
Ω
−
80
−
Ω
−
−1.8 −
mV/K
−
−
140 pF
VALUE
330
500
UNIT
K/W
K/W
2003 Mar 25
3
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