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TDSL11.0 Просмотр технического описания (PDF) - Vishay Semiconductors

Номер в каталоге
Компоненты Описание
производитель
TDSL11.0
Vishay
Vishay Semiconductors Vishay
TDSL11.0 Datasheet PDF : 6 Pages
1 2 3 4 5 6
TDSL11.0
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25°C, unless otherwise specified
TDSL1150 /TDSL1160
Parameter
Test Conditions
Symbol
Value
Unit
Reverse voltage per segment
DC forward current per segment
Peak forward current per segment
Surge forward current per segment
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
VR
6
V
IF
15
mA
IFM
45
mA
tp 10 ms (non repetitive) IFSM
106
mA
Tamb 45°C
PV
320
mW
Tj
100
°C
Tamb –40 to + 85
°C
Tstg
–40 to + 85
°C
t 3 sec, 2mm below
Tsd
260
°C
seating plane
Thermal resistance LED junction/ambient
RthJA
180
K/W
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
High efficiency red (TDSL1150 , TDSL1160 )
Parameter
Test Conditions
Type Symbol Min Typ Max Unit
Luminous intensity per segment
(digit average) 1)
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage per segment
Reverse voltage per segment
Junction capacitance
1) IVmin and IV groups are mean
IF = 2 mA
IF = 5 mA
IF = 20 mA, tp/T =0.25
IF = 2 mA
IF = 2 mA
IF = 2 mA
IF = 2 mA
IF = 20 mA
IR = 10 mA
VR = 0, f = 1 MHz
values of segments a to g
IV 180 260
mcd
IV
1000
mcd
IV
1300
mcd
ld 612
625 nm
lp
635
nm
ϕ
±50
deg
VF
1.8 2.4 V
VF
2.7 3
V
VR
6 20
V
Cj
30
pF
www.vishay.com
2 (6)
Document Number 83121
Rev. A2, 05-Oct-00

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