SPF-3043 Просмотр технического описания (PDF) - Stanford Microdevices
Номер в каталоге
Компоненты Описание
производитель
SPF-3043 Datasheet PDF : 3 Pages
| |||
Typical Performance
Gain vs Frequency (3V,20mA)
35
0
30
-10
Isolation
25
-20
20
Gmax
-30
15
-40
10
Gain
-50
5
-60
0
2
4
6
8
10
Frequency (GHz)
S11,S22 vs Frequency (3V,20mA)
1.0
0.5
2.0
Preliminary
SPF-3043 Low Noise pHEMT GaAs FET
35
30
25
20
15
10
5
0
Gain vs Frequency (5V,40mA)
0
-10
Isolation
-20
-30
Gmax
-40
Gain
-50
-60
2
4
6
8
10
Frequency (GHz)
S11,S22 vs Frequency (5V,40mA)
1.0
0.5
2.0
0.2
0.0
S11
10 GHz
8 GHz
0.2
0.5 S22 1.0
2.0
5.0
5.0
inf
0.2
0.0
S11
10 GHz
8 GHz
0.2
0.5 S22 1.0
2.0
5.0
5.0
inf
6 GHz
0.2
1 GHz
5.0
4 GHz
2 GHz
3 GHz
0.5
2.0
6 GHz
0.2
1 GHz
5.0
4 GHz
2 GHz
3 GHz
0.5
2.0
1.0
1.0
Note: S-parameters are de-embedded to the device leads with ZS=ZL=50Ω. The data represents typical performace of the device. De-
embedded s-parameters can be downloaded from our website (www.stanfordmicro.com).
Typical Performance
Freq
VDS
(MHz)
(V)
900
3
5
1900
3
5
IDS
(mA)
20
40
20
40
Fmin
(dB)
0.25
0.32
0.50
0.54
Γ OPT
Mag ∠ Ang
0.79 ∠ 12
0.75 ∠ 12
0.62 ∠ 34
0.62 ∠ 33
rN
0.22
0.25
0.19
0.20
Gmax
(dB)
25.5
26.5
22.4
23.3
P1dB
(dBm)
15.5
20.0
15.5
20.0
OIP3
(dBm)
29
32
29
32
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
2
http://www.stanfordmicro.com
EDS-101772 Rev. A
Share Link: 