P6SMB100AT3G Просмотр технического описания (PDF) - ON Semiconductor
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производитель
P6SMB100AT3G Datasheet PDF : 7 Pages
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P6SMB6.8AT3G Series, SZP6SMB6.8AT3G Series
ELECTRICAL CHARACTERISTICS
Device*
Device
Marking
VRWM
(Note 6)
V
IR @
VRWM
mA
Breakdown Voltage
VBR V (Note 7)
Min Nom Max
@ IT
mA
VC @ IPP (Note 8)
VC
IPP
V
A
QVBR
%/C
Ctyp
(Note 9)
pF
P6SMB6.8AT3G
P6SMB7.5AT3G
P6SMB8.2AT3G
P6SMB9.1AT3G
6V8A
5.8
1000 6.45 6.8 7.14 10
10.5
57
0.057
2380
7V5A
6.4
500 7.13 7.51 7.88 10
11.3
53
0.061
2180
8V2A
7.02
200 7.79 8.2 8.61 10
12.1
50
0.065
2015
9V1A
7.78
50
8.65 9.1 9.55 1
13.4
45
0.068
1835
P6SMB10AT3G
P6SMB12AT3G
P6SMB13AT3G
10A
8.55
10
9.5 10 10.5 1
14.5
41
0.073
1690
12A
10.2
5
11.4 12 12.6 1
16.7
36
0.078
1435
13A
11.1
5
12.4 13.05 13.7 1
18.2
33
0.081
1335
P6SMB15AT3G
P6SMB16AT3G
P6SMB18AT3G
P6SMB20AT3G
15A
12.8
16A
13.6
18A
15.3
20A
17.1
5
14.3 15.05 15.8 1
21.2
28
0.084
1175
5
15.2 16 16.8 1
22.5
27
0.086
1110
5
17.1 18 18.9 1
25.2
24
0.088
1000
5
19
20
21
1
27.7
22
0.09
910
P6SMB22AT3G
P6SMB24AT3G
P6SMB27AT3G
P6SMB30AT3G
22A
18.8
24A
20.5
27A
23.1
30A
25.6
5
20.9 22 23.1 1
30.6
20
0.092
835
5
22.8 24 25.2 1
33.2
18
0.094
775
5
25.7 27.05 28.4 1
37.5
16
0.096
700
5
28.5 30 31.5 1
41.4
14.4
0.097
635
P6SMB33AT3G
P6SMB36AT3G
P6SMB39AT3G
P6SMB43AT3G
33A
28.2
36A
30.8
39A
33.3
43A
36.8
5
31.4 33.05 34.7 1
45.7
13.2
0.098
585
5
34.2 36 37.8 1
49.9
12
0.099
540
5
37.1 39.05 41
1
53.9
11.2
0.1
500
5
40.9 43.05 45.2 1
59.3
10.1
0.101
460
P6SMB47AT3G
P6SMB51AT3G
P6SMB56AT3G
P6SMB62AT3G
47A
40.2
51A
43.6
56A
47.8
62A
53
5
44.7 47.05 49.4 1
64.8
9.3
0.101
425
5
48.5 51.05 53.6 1
70.1
8.6
0.102
395
5
53.2 56 58.8 1
77
7.8
0.103
365
5
58.9 62 65.1 1
85
7.1
0.104
335
P6SMB68AT3G
P6SMB75AT3G
P6SMB82AT3G
P6SMB91AT3G
68A
58.1
75A
64.1
82A
70.1
91A
77.8
5
64.6 68 71.4 1
92
6.5
0.104
305
5
71.3 75.05 78.8 1
103
5.8
0.105
280
5
77.9 82 86.1 1
113
5.3
0.105
260
5
86.5 91 95.5 1
125
4.8
0.106
235
P6SMB100AT3G
P6SMB110AT3G
P6SMB120AT3G
P6SMB130AT3G
100A
85.5
110A
94
120A
102
130A
111
5
95 100 105
1
137
4.4
0.106
215
5
105 110.5 116
1
152
4.0
0.107
200
5
114 120 126
1
165
3.6
0.107
185
5
124 130.5 137
1
179
3.3
0.107
170
P6SMB150AT3G
P6SMB160AT3G
P6SMB180AT3G
150A
128
160A
136
180A
154
5
143 150.5 158
1
207
2.9
0.108
150
5
152 160 168
1
219
2.7
0.108
140
5
171 180 189
1
246
2.4
0.108
130
P6SMB200AT3G
200A
171
5
190 200 210
1
274
2.2
0.108
115
6. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than
the DC or continuous peak operating voltage level.
7. VBR measured at pulse test current IT at an ambient temperature of 25C.
8. Surge current waveform per Figure 2 and derate per Figure 3.
9. Bias Voltage = 0 V, F = 1 MHz, TJ = 25C
* Include SZ-prefix devices where applicable.
http://onsemi.com
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