NTE6507 Просмотр технического описания (PDF) - NTE Electronics
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NTE6507 Datasheet PDF : 4 Pages
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DC Characteristics: (VCC = 5V ±5%, TA = 0° to +70°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Max Unit
Input High Voltage
Logic and ∅o(in)
Logic
Input Low Voltage
Logic and ∅o(in)
Input Loading
RDY
VIH
VIL
IIL
Vin = 0V, VCC = 5.25V
+2.0
VCC
V
VCC–0.5 VCC+0.25 V
–0.3
+0.8
V
–10
–300
µA
Input Leakage Current
Logic (Excluding RDY)
Iin Vin = 0 to 5.25V, VCC = 0
–
2.5
µA
∅o(in)
–
10.0
µA
Three–State (Off State) Input Current
ITSI Vin = 0.4 to 2.4V, VCC = 5.25V
DB0–DB7
–
±10
µA
Output High Voltage
DB0–DB7, A0–A15, R/W
VOH ILOAD = –100µA, VCC = 4.75V
2.4
–
V
Output Low Voltage
DB0–DB7, A0–A15, R/W
VOL ILOAD = 1.6mA, VCC = 4.75V
–
0.4
V
Power Dissipation
Capaticance
RES, RDY,
DB0–DB7
PD VCC = 5.25V
–
700 mW
Vin = 0, TA = +25°C, f = 1MHz
Cin
–
10
pF
–
15
pF
A0–A15, R/W
∅o(in)
Cout
COo(in)
–
12
pF
–
15
pF
Dynamic Operating Characteristics: (VCC = 5V ±5%, TA = 0° to +70°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Max Unit
Cycle Time
∅o(in) Low Time
∅o(in) High Time
∅o Neg to ∅1 Pos Delay
∅o Neg to ∅2 Neg Delay
∅o Pos to ∅1 Neg Delay
∅o Pos to ∅2 Pos Delay
∅α(in) Rise and Fall Time
∅1(OUT) Pulse Width
∅2(OUT) Pulse Width
Delay Between ∅1 and ∅2
∅1 and ∅2 Rise and Fall Times
TCYC
1.00
40
µs
TL∅o Note 2
480
–
ns
TH∅o Note 2
460
–
ns
T01+ Load = 100pF
10
70
ns
T02– Load = 100pF
5
65
ns
T01– Load = 100pF
5
65
ns
T02+ Load = 100pF
15
75
ns
TRO, TFO Note 3
0
30
ns
TPWHO1
TLOo–20
TLOo
ns
TPWHO2
TLOo–40
TLOo–10
ns
TD
5
–
ns
TR, TF Load = 1TTL load +30pF, Note 3
–
25
ns
Note 2. Measured at 50% points.
Note 3. Measured between 10% and 90% points.
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