TSSF4500_08 Просмотр технического описания (PDF) - Vishay Siliconix
Номер в каталоге
Компоненты Описание
производитель
TSSF4500_08 Datasheet PDF : 5 Pages
| |||
TSSF4500
High Speed Infrared Emitting Diode, RoHS Vishay Semiconductors
Compliant, 890 nm, GaAlAs Double Hetero
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
t ≤ 5 s, 2 mm from case
Thermal resistance junction/ambient
Leads not soldered
Note
Tamb = 25 °C, unless otherwise specified
SYMBOL
Tj
Tamb
Tstg
Tsd
RthJA
VALUE
100
- 40 to + 100
- 40 to + 100
260
450
UNIT
°C
°C
°C
°C
K/W
250
200
150
RthJA
100
50
0
0
94 8029
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
125
100
75
RthJA
50
25
0
0
94 7916
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
Forward voltage
Temperature coefficient of VF
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of φe
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of λp
Rise time
Fall time
Cut-off frequency
Virtual source diameter
IF = 100 mA, tp = 20 ms
IF = 1.5 A, tp = 100 µs
IF = 1 mA
VR = 5 V
VR = 0 V, f = 1 MHz, E = 0
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
IF = 100 mA, tp = 20 ms
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 100 mA
IDC = 70 mA, IAC = 30 mA pp
Note
Tamb = 25 °C, unless otherwise specified
SYMBOL
VF
VF
TKVF
IR
Cj
Ie
Ie
φe
TKφe
ϕ
λp
Δλ
TKλp
tr
tf
fc
d
MIN.
10
TYP.
1.35
2.4
- 1.8
160
20
200
35
- 0.7
± 22
890
40
0.2
30
30
12
2.1
MAX.
1.6
10
50
UNIT
V
V
mV/K
µA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
MHz
mm
Document Number: 81040
Rev. 1.6, 04-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
241
Share Link: 