TSSF4500_08 Просмотр технического описания (PDF) - Vishay Siliconix
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TSSF4500_08 Datasheet PDF : 5 Pages
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TSSF4500
Vishay Semiconductors
High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm,
GaAlAs Double Hetero
94 8688
DESCRIPTION
TSSF4500 is an infrared, 890 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
FEATURES
• Package type: leaded
• Package form: side view
• Dimensions (L x W x H in mm): 4.5 x 4 x 4.8
• Peak wavelength: λp = 890 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 22°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 12 MHz
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
• Infrared high speed remote control and free air data
transmission systems with high modulation frequencies or
high data transmission rate requirements
• TSSF4500 is ideal for the design of transmission systems
according to IrDA requirements and for carrier frequency
based systems (e.g. ASK/FSK - coded, 450 kHz or 1.3 MHz)
PRODUCT SUMMARY
COMPONENT
TSSF4500
Ie (mW/sr)
20
Note
Test conditions see table “Basic Characteristics”
ϕ (deg)
± 22
λp (nm)
890
tr (ns)
30
ORDERING INFORMATION
ORDERING CODE
TSSF4500
Note
MOQ: minimum order quantity
PACKAGING
Bulk
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
tp/T = 0.5, tp = 100 µs
tp = 100 µs
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM
Side view
SYMBOL
VR
IF
IFM
IFSM
PV
VALUE
5
100
200
1.5
160
UNIT
V
mA
mA
A
mW
www.vishay.com
240
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81040
Rev. 1.6, 04-Sep-08
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