MIC5021
DC CHARACTERISTICS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, GND = 0V, VDD = 12V, CT = OPEN,
Gate CL = 1500 pF (IRF540 MOSFET).
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Gate Fall Time
tF
—
400
500
ns Note 6
Max. Operating Frequency
fMAX
100
150
—
kHz Note 7
Note 1: When using sense MOSFETs, it is recommended that RSENSE < 50Ω. Higher values may affect the sense
MOSFET’s current transfer ratio.
2: DC measurement.
3: Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for gate transition from 0V to 2V.
4: Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for gate transition from 2V to 17V.
5: Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for gate transition from 20V (gate on voltage)
to 17V.
6: Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for gate transition from 17V to 2V.
7: Frequency where gate on voltage reduces to 17V with 50% input duty cycle.
8: Gate on time tG(ON) and tG(OFF) are not 100% production tested.
DS20005677A-page 4
2016 Microchip Technology Inc.