IXTA10N60P Просмотр технического описания (PDF) - IXYS CORPORATION
Номер в каталоге
Компоненты Описание
производитель
IXTA10N60P Datasheet PDF : 4 Pages
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Fig. 7. Input Adm ittance
16
14
12
10
8
6
TJ =125º C
25º C
4
-40º C
2
0
3.5
4
4.5
5
5.5
6
6.5
VG S - Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
35
30
25
20
15
10
TJ = 125º C
TJ = 25º C
5
0
0.4 0.5 0.6 0.7 0.8 0.9
1
1.1
VS D - Volts
10000
1000
Fig. 11. Capacitance
f = 1MHz
Ciss
Coss
100
IXTA 10N60P IXTI 10N60P
IXTP 10N60P
Fig. 8. Transconductance
20
18
16
14 TJ = -40º C
25º C
12
125º C
10
8
6
4
2
0
0
2
4
6
8
10
12
14
I D - Amperes
Fig. 10. Gate Charge
10
9
VDS = 300V
8
ID = 5A
7
IG = 10mA
6
5
4
3
2
1
0
0
5
10
15
20
25
30
35
Q G - nanoCoulombs
Fig. 12. Maxim um Transient Therm al
Re s is tance
1.00
0.10
10
0
Crss
5 10 15 20 25 30 35 40
VD S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
0.01
0.01
0.1
1
10
100
Pulse Width - milliseconds
1000
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