IXTA10N60P Просмотр технического описания (PDF) - IXYS CORPORATION
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Компоненты Описание
производитель
IXTA10N60P Datasheet PDF : 4 Pages
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Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
t
d(off)
t
f
Qg(on)
Qgs
Qgd
RthJC
RthCS
IXTA 10N60P IXTI 10N60P
IXTP 10N60P
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
TO-263 (IXTA) Outline
VDS= 10 V; ID = 0.5 ID25, pulse test
6
11
S
VGS = 0 V, VDS = 25 V, f = 1 MHz
1610
pF
165
pF
14
pF
VGS = 10 V, VDS = 0.5 VDSS, ID =0.5 ID25
R
G
=
10
Ω
(External)
20
ns
24
ns
55
ns
18
ns
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
32
nC
11
nC
10
nC
(TO-220)
(Leaded TO-263)
0.25
0.21
0.62° C/W
° C/W
° C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
IS
VGS = 0 V
ISM
Repetitive
V
I = I , V = 0 V,
SD
F S GS
Pulse test, t ≤300 µs, duty cycle d≤ 2 %
10 A
30 A
1.5 V
trr
IF = 9 A, -di/dt = 100 A/µs
V = 100V
R
500
ns
TO-220 (IXTP) Outline
Leaded 263 (IXTI) Outline
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585
6,710,405B2 6,759,692
6,710,463
6,771,478 B2
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