IGP10N60T(2006) Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

IGP10N60T
(Rev.:2006)

Low Loss IGBT in TrenchStop® and Fieldstop technology

Infineon Technologies 

TrenchStop® Series

IGP10N60T

q

100K/W

D=0.5

10-1K/W

0.2

0.1

0.05

R,(K/W)

0.2911

0.4092

0.5008

0.1529

R1

τ, (s)

6.53*10-2

8.33*10-3

7.37*10-4

7.63*10-5

R2

0.02

0.01

C1=τ1/R1 C2=τ2/R2

single pulse

10-2K/W

10µs 100µs

1ms

10ms 100ms

tP, PULSE WIDTH

Figure 21. IGBT transient thermal resistance

(D = tp / T)

Power Semiconductors

9

Rev. 2.2 June 06

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