IGP10N60T(2006) Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

IGP10N60T
(Rev.:2006)

Low Loss IGBT in TrenchStop® and Fieldstop technology

Infineon Technologies 

TrenchStop® Series

IGP10N60T

q

1,0m J

*) Eon and Etsinclude losses

due to diode recovery

*) Eon and Ets include losses

due to diode recovery

E ts*

0,8 mJ

Ets*

0,8m J

0,6m J

0,4m J

0,2m J

E off

0,6 mJ

0,4 mJ

E on*

0,2 mJ

Eoff

Eon*

0,0m J

0A

5A

10A

15A

IC, COLLECTOR CURRENT

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, TJ = 175°C,

VCE = 400V, VGE = 0/15V, RG = 23Ω,

Dynamic test circuit in Figure E)

0,0 mJ

10Ω

20Ω

30Ω

40Ω

50Ω

RG, GATE RESISTOR

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, TJ = 175°C,

VCE = 400V, VGE = 0/15V, IC = 10A,

Dynamic test circuit in Figure E)

0,6mJ

*) Eon and Ets include losses

due to diode recovery

0,5mJ

Ets*

0,4mJ

0,3mJ Eoff

0,2mJ

0,1mJ Eon*

0,0mJ

50°C

100°C

150°C

TJ, JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses

as a function of junction

temperature

(inductive load, VCE = 400V,

VGE = 0/15V, IC = 10A, RG = 23Ω,

Dynamic test circuit in Figure E)

0 ,8 m J

*) Eon and Ets include losses

due to diode recovery

0 ,6 m J

E ts*

0 ,4 m J

E off

0 ,2 m J

Eon*

0 ,0 m J

300V 350V 400V 450V 500V 550V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 16. Typical switching energy losses

as a function of collector emitter

voltage

(inductive load, TJ = 175°C,

VGE = 0/15V, IC = 10A, RG = 23Ω,

Dynamic test circuit in Figure E)

Power Semiconductors

7

Rev. 2.2 June 06

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