G10T60(2006) Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

G10T60
(Rev.:2006)

Low Loss IGBT in TrenchStop® and Fieldstop technology

Infineon Technologies 

TrenchStop® Series

IGP10N60T

q

30A

25A

20A

TC=80°C

15A

TC=110°C

10A

Ic

5A

0A

10Hz

Ic

100Hz

1kHz

10kHz 100kHz

f, SWITCHING FREQUENCY

Figure 1. Collector current as a function of

switching frequency

(Tj ≤ 175°C, D = 0.5, VCE = 400V,

VGE = 0/+15V, RG = 23Ω)

tp=1µs

5µs

10A

20µs

100µs

1A

500µs

10ms

0,1A

1V

DC

10V

100V

1000V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 2. Safe operating area

(D = 0, TC = 25°C, Tj ≤175°C;

VGE=15V)

120W

30A

100W

80W

20A

60W

40W

10A

20W

0W

25°C 50°C 75°C 100°C 125°C 150°C

Figure 3.

TC, CASE TEMPERATURE

Power dissipation as a function of

case temperature

(Tj ≤ 175°C)

0A

25°C

75°C

125°C

Figure 4.

TC, CASE TEMPERATURE

Collector current as a function of

case temperature

(VGE ≥ 15V, Tj ≤ 175°C)

Power Semiconductors

4

Rev. 2.2 June 06

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