NESG3031M05-T1 Просмотр технического описания (PDF) - California Eastern Laboratories.

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NESG3031M05-T1

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG)

California Eastern Laboratories. 

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

25

20

MSG

15

MAG

VCE = 1 V

f = 5.2 GHz

10

|S21e|2

5

0

–5

1

10

100

Collector Current IC (mA)

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

25

VCE = 3 V

f = 5.2 GHz

20

15 MSG MAG

10

|S21e|2

5

0

–5

1

10

100

Collector Current IC (mA)

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

25

VCE = 2 V

f = 5.8 GHz

20

15

MAG

10

|S21e|2

5

0

–5

1

10

100

Collector Current IC (mA)

Remark The graphs indicate nominal characteristics.

NESG3031M05

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

25

20

MSG

VCE = 2 V

f = 5.2 GHz

15

MAG

10

|S21e|2

5

0

–5

1

10

100

Collector Current IC (mA)

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

25

VCE = 1 V

f = 5.8 GHz

20

15 MSG

MAG

10

5

|S21e|2

0

–5

1

10

100

Collector Current IC (mA)

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

25

VCE = 3 V

f = 5.8 GHz

20

15

MAG

10

|S21e|2

5

0

–5

1

10

100

Collector Current IC (mA)

6

Data Sheet PU10414EJ03V0DS

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