NESG3031M05-T1-A Просмотр технического описания (PDF) - California Eastern Laboratories.

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NESG3031M05-T1-A

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG)

California Eastern Laboratories. 

1 000

DC CURRENT GAIN vs.

COLLECTOR CURRENT

VCE = 1 V

100

NESG3031M05

1 000

DC CURRENT GAIN vs.

COLLECTOR CURRENT

VCE = 2 V

100

10

0.1

1 000

1

10

100

Collector Current IC (mA)

DC CURRENT GAIN vs.

COLLECTOR CURRENT

VCE = 3 V

100

10

0.1

1

10

100

Collector Current IC (mA)

GAIN BANDWIDTH PRODUCT

vs. COLLECTOR CURRENT

30

VCE = 2 V

f = 2 GHz

25

20

15

10

5

0

1

10

100

Collector Current IC (mA)

Remark The graphs indicate nominal characteristics.

10

0.1

1

10

100

Collector Current IC (mA)

GAIN BANDWIDTH PRODUCT

vs. COLLECTOR CURRENT

30

VCE = 1 V

f = 2 GHz

25

20

15

10

5

0

1

10

100

Collector Current IC (mA)

GAIN BANDWIDTH PRODUCT

vs. COLLECTOR CURRENT

30

VCE = 3 V

f = 2 GHz

25

20

15

10

5

0

1

10

100

Collector Current IC (mA)

4

Data Sheet PU10414EJ03V0DS

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