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NESG3031M05-T1-A Просмотр технического описания (PDF) - California Eastern Laboratories.

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NESG3031M05-T1-A Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
NESG3031M05
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Symbol
Test Conditions
DC Characteristics
Collector Cut-off Current
ICBO VCB = 5 V, IE = 0 mA
Emitter Cut-off Current
DC Current Gain
IEBO VEB = 1 V, IC = 0 mA
hFE Note 1 VCE = 2 V, IC = 6 mA
RF Characteristics
Insertion Power Gain
Noise Figure (1)
Noise Figure (2)
Noise Figure (3)
Associated Gain (1)
Associated Gain (2)
Associated Gain (3)
Reverse Transfer Capacitance
Maximum Stable Power Gain
S21e2 VCE = 3 V, IC = 20 mA, f = 5.8 GHz
NF VCE = 2 V, IC = 6 mA, f = 2.4 GHz,
ZS = ZSopt, ZL = ZLopt
NF VCE = 2 V, IC = 6 mA, f = 5.2 GHz,
ZS = ZSopt, ZL = ZLopt
NF VCE = 2 V, IC = 6 mA, f = 5.8 GHz,
ZS = ZSopt, ZL = ZLopt
Ga
VCE = 2 V, IC = 6 mA, f = 2.4 GHz,
ZS = ZSopt, ZL = ZLopt
Ga
VCE = 2 V, IC = 6 mA, f = 5.2 GHz,
ZS = ZSopt, ZL = ZLopt
Ga
VCE = 2 V, IC = 6 mA, f = 5.8 GHz,
ZS = ZSopt, ZL = ZLopt
Cre Note 2 VCB = 2 V, IE = 0 mA, f = 1 MHz
MSGNote VCE = 3 V, IC = 20 mA, f = 5.8 GHz
3
Gain 1 dB Compression Output Power
3rd Order Intermodulation Distortion
Output Intercept Point
PO (1 dB)
OIP3
VCE = 3 V, IC (set) = 20 mA,
f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt
VCE = 3 V, IC (set) = 20 mA,
f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt
Notes 1. Pulse measurement: PW 350 µs, Duty Cycle 2%
2. Collector to base capacitance when the emitter grounded
3. MSG = S21
S12
hFE CLASSIFICATION
Rank
Marking
hFE Value
FB
T1K
220 to 380
MIN. TYP. MAX. Unit
100
nA
100
nA
220
300
380
6.0
8.5
dB
0.6
dB
0.95
dB
1.1
1.5
dB
16.0
dB
10.0
dB
7.5
9.5
dB
0.15
0.25
pF
11.0
14.0
dB
13.0
dBm
18.0
dBm
2
Data Sheet PU10414EJ03V0DS

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