NTE27 Просмотр технического описания (PDF) - NTE Electronics

Номер в каталоге

Компоненты Описание

производитель

NTE27

Germanium PNP Transistor High Current, High Gain Amp

NTE Electronics 

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

ON Characteristics

DC Current Gain

Collector–Emitter Saturation Voltage

Base–Emitter Saturation Voltage

Small Signal Characteristics

hFE

VCE(sat)

VBE(sat)

IC = 15A, VCE = 2V, Note 1

IC = 60A, VCE = 2V, Note 1

IC = 15A, IB = 1A, Note 1

IC = 60A, IB = 6A, Note 1

IC = 15A, IB = 1A, Note 1

IC = 60A, IB = 6A, Note 1

60 – 180

15 – –

– – 0.15 V

– – 0.3 V

– – 0.6 V

– – 1.0 V

Common–Emitter Cutoff Frequency

fαe IC = 15A, VCE = 2V

2 – – kHz

Note 1. To avoid excessive heating of the collector junction, perform test with pulse method.

.350 (8.89)

.135 (3.45) Max

.875 (22.2)

Dia Max

Seating

Plane

.312 (7.93) Min

.040 (1.02)

Emitter

1.187 (30.16)

.215 (5.45)

.430

(10.92)

.665

(16.9)

.156 (3.96) Dia

(2 Holes)

.188 (4.8) R Max

Base

.525 (13.35) R Max

Collector/Case

Share Link: