MBM29DL16XBE70 Просмотр технического описания (PDF) - Spansion Inc.

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Компоненты Описание

производитель

MBM29DL16XBE70

FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation

Spansion Inc. 

FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-20880-4E

FLASH MEMORY

CMOS

16M (2M × 8/1M × 16) BIT Dual Operation

MBM29DL16XTE/BE70/90

s FEATURES

• 0.23 µm Process Technology

• Simultaneous Read/Write operations (dual bank)

Multiple devices available with different bank sizes

(Refer to “MBM29DL16XTE/BE Device Bank Divisions Table” in sGENERAL DESCRIPTION)

Host system can program or erase in one bank, then immediately and simultaneously read from the other bank

Zero latency between read and write operations

Read-while-erase

Read-while-program

s PRODUCT LINE UP

(Continued)

Part No.

Address Access Time (Max)

CE Access Time (Max)

OE Access Time (Max)

Power Supply Voltage

MBM29DL16XTE/BE70

70 ns

70 ns

30 ns

3.0

V

+0.6 V

−0.3 V

MBM29DL16XTE/BE90

90 ns

90 ns

35 ns

s PACKAGES

48-pin plastic TSOP (1)

Marking Side

48-pin plastic TSOP (1)

48-pin plastic FBGA

(FPT-48P-M19)

Marking Side

(FPT-48P-M20)

(BGA-48P-M11)

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