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Номер в каталоге
Компоненты Описание
TSML3700 Просмотр технического описания (PDF) - Vishay Semiconductors
Номер в каталоге
Компоненты Описание
производитель
TSML3700
GaAs/GaAlAs Infrared Emitting Diode in SMT Package
Vishay Semiconductors
TSML3700 Datasheet PDF : 6 Pages
1
2
3
4
5
6
TSML3700
Vishay Telefunken
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
t
p
/T = 0.5, t
p
= 100
m
s
t
p
= 100
m
s
x
t 10sec
Symbol
Value
Unit
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
5
V
100
mA
200
mA
1
A
170
mW
100
°
C
–55...+100
°
C
–55...+100
°
C
260
°
C
450
K/W
Basic Characteristics
T
amb
= 25
_
C
Parameter
Forward Voltage
Temp. Coefficient of V
F
Reverse Current
Junction Capacitance
Radiant Intensity
Radiant Power
Temp. Coefficient of
f
e
Angle of Half Intensity
Peak Wavelength
Spectral Bandwidth
Temp. Coefficient of
l
p
Rise Time
Fall Time
Test Conditions
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100
m
s
I
F
= 100mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100
m
s
I
F
= 100 mA, t
p
= 20 ms
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 20 mA
I
F
= 1 A
I
F
= 20 mA
I
F
= 1 A
Symbol Min
V
F
V
F
TK
VF
I
R
C
j
I
e
2.5
I
e
f
e
TK
f
e
ϕ
l
p
Dl
TK
l
p
t
r
t
r
t
f
t
f
Typ
Max Unit
1.3
1.7
V
2.2
V
–1.3
mV/K
100
m
A
20
pF
7
mW/sr
60
mW/sr
32
mW
–0.8
%/K
±
60
deg
925
nm
50
nm
0.2
nm/K
800
ns
500
ns
800
ns
500
ns
www.vishay.com
2 (6)
Document Number 81034
Rev. 3, 20-May-99
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