HMPS8099 Просмотр технического описания (PDF) - Hi-Sincerity Microelectronics
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HMPS8099 Datasheet PDF : 4 Pages
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6318-A
Issued Date : 1996.07.18
Revised Date : 2000.10.01
Page No. : 1/4
HMPS8099
NPN SILICON TRANSISTOR
Description
HMPS8099 is designed for general purpose amplifier applications.
Features
• Low Collector-Emitter Saturation Voltage
• HMPS8099 is complementary to HMPS8599
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +125 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ 80 V
VCES Collector to Emitter Voltage...................................................................................... 80 V
VEBO Emitter to Base Voltage ............................................................................................. 6 V
IC Collector Current ...................................................................................................... 500 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
80
-
BVCEO
80
-
BVEBO
6
-
ICBO
-
-
IEBO
-
-
ICEO
-
-
*hFE1
100
-
*hFE2
100
-
*hFE3
75
-
*VCE(sat)1
-
-
*VCE(sat)2
-
-
VBE(on)
0.6
-
Max.
-
-
-
100
100
100
300
-
-
0.4
0.3
0.8
Unit
Test Conditions
V
IC=100uA, IE=0
V
IC=10mA, IB=0
V
IE=10uA, IC=0
nA VCB=80V, IE=0
nA VEB=4V, IC=0
nA VCE=60V, IB=0
IC=1mA, VCE=5V
IC=10mA, VCE=5V
IC=100mA, VCE=5V
V
IC=100mA, IB=5mA
V
IC=100mA, IB=10mA
V
IC=10mA, VCE=5V
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
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