HSD1159 Просмотр технического описания (PDF) - Hi-Sincerity Microelectronics
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HSD1159 Datasheet PDF : 3 Pages
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HI-SINCERITY
MICROELECTRONICS CORP.
HSD1159
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Capable of efficient drive with small internal loss due to excellent tf.
Spec. No. : HE6706-B
Issued Date : 1993.01.13
Revised Date : 1999.08.01
Page No. : 1/3
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 40 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage .................................................................................... 200 V
BVCEO Collector to Emitter Voltage................................................................................... 60 V
BVEBO Emitter to Base Voltage ........................................................................................... 6 V
IC Collector Current ........................................................................................................... 4.5 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
200
-
BVCEO
60
-
BVEBO
6
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
0.5
*VBE(sat)
-
-
*hFE1
30
-
*hFE2
25
-
ft
-
10
Max.
-
-
-
0.1
0.1
1
1.5
160
-
-
Unit
Test Conditions
V
V
V
mA
mA
V
V
MHz
IC=5mA, IE=0
IC=5mA, IB=0
IE=5mA, IC=0
VCB=40V, IE=0
VEB=5V, IC=0
IC=4A, IB=0.4A
IC=4A, IB=0.4A
IC=1A, VCE=5V
IC=4A, VCE=5V
VCE=5V, IC=1A
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
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