HMPSA18 Просмотр технического описания (PDF) - Hi-Sincerity Microelectronics
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HMPSA18 Datasheet PDF : 4 Pages
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6306-B
Issued Date : 1992.09.09
Revised Date : 2000.10.01
Page No. : 1/4
HMPSA18
NPN SILICON TRANSISTOR
Description
The HMPSA18 is designed for low noise stage of audio amplifiers.
Features
• Low Noise : 1.5 dB Max.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ 45 V
VCES Collector to Emitter Voltage...................................................................................... 45 V
VEBO Emitter to Base Voltage .......................................................................................... 6.5 V
IC Collector Current ...................................................................................................... 200 mA
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)1
*VCE(sat)2
VBE(on)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
Typ.
45
-
45
-
6.5
-
-
-
-
-
-
-
-
0.6
300
-
500
1100
500
1150
100
160
-
1.7
Max.
-
-
-
50
0.2
0.3
0.7
-
-
1500
-
3
Unit
Test Conditions
V
V
V
nA
V
V
V
MHz
pF
IC=100uA, IE=0
IC=10mA, IB=0
IE=10uA, IC=0
VCB=30V, IE=0
IC=10mA, IB=0.5mA
IC=50mA, IB=5mA
VCE=5V, IC=1mA
VCE=5V, IC=100uA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=1mA, f=100MHz
VCB=5V, f=1MHz, IE=0
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE1
Rank
hFE
A
>300
B
>500
HSMC Product Specification
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