HMPS650 Просмотр технического описания (PDF) - Hi-Sincerity Microelectronics
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HMPS650 Datasheet PDF : 4 Pages
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HI-SINCERITY
MICROELECTRONICS CORP.
HMPS650
NPN SILICON TRANSISTOR
Description
The HMPS650 is designed for audio transistor.
Spec. No. : HE6327-B
Issued Date : 1992.09.09
Revised Date : 2000.09.20
Page No. : 1/4
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ 60 V
VCEO Collector to Emitter Voltage ..................................................................................... 40 V
VEBO Emitter to Base Voltage ............................................................................................. 5 V
IC Collector Current .............................................................................................................. 2 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
40
-
BVCEO
60
-
BVEBO
5
-
ICBO
-
-
IEBO
-
-
*VCE(sat)1
-
-
*VCE(sat)2
-
-
VBE(on)
-
-
*VBE(sat)
-
-
*hFE1
75
-
*hFE2
75
-
*hFE3
75
-
*hFE4
40
-
ft
75
-
Max.
-
-
-
100
100
0.5
0.3
1
1.2
-
-
-
-
-
Unit
Test Conditions
V
V
V
nA
nA
V
V
V
V
MHz
IC=10mA, IB=0
IC=100uA, IE=0
IE=10uA, IC=0
VCB=60V, IE=0
VEB=4V, IC=0
IC=2A, IB=200mA
IC=1A, IB=100mA
VCE=2V, IC=1A
IC=1A, IB=100mA
VCE=2V, IC=50mA
VCE=2V, IC=500mA
VCE=2V, IC=1A
VCE=2V, IC=2A
VCE=5V, IC=50mA, f=100MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
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