HPN2369A Просмотр технического описания (PDF) - Hi-Sincerity Microelectronics
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HPN2369A Datasheet PDF : 4 Pages
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6106
Issued Date : 1992.09.22
Revised Date : 2001.09.20
Page No. : 1/4
HPN2369A
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HPN2369A is designed for general purpose switching and amplifier
applications.
Features
• Low Collector Saturation Voltage
• High Speed Switching Transistor
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature .......................................................................................................... -55 ~ +150 °C
Junction Temperature .................................................................................................. +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) .............................................................................................. 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................................... 40 V
VCES Collector to Emitter Voltage..................................................................................................... 40 V
VCEO Collector to Emitter Voltage .................................................................................................... 15 V
VEBO Emitter to Base Voltage ......................................................................................................... 4.5 V
IC Collector Current ..................................................................................................................... 200 mA
ICM Peak Collector Current ......................................................................................................... 300 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
40
-
BVCES
40
-
BVEBO
4.5
-
IEBO
-
-
ICBO
-
-
ICES
-
-
*VCE(sat)1
-
-
*VCE(sat)2
-
-
*VCE(sat)3
-
-
*VCE(sat)4
-
-
*VBE(sat)
700
-
*hFE1
40
-
*hFE2
30
-
*hFE3
20
-
fT
500
-
Cob
-
-
Max.
-
-
-
100
400
400
200
250
300
500
850
120
-
-
-
4
Unit
Test Conditions
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
MHz
pF
IC=10uA, IE=0
IC=10uA, VBE=0
IE=10uA, IC=0
VEB=4V, IC=0
VCB=20V, IE=0
VCE=40V, VBE=0
IC=10mA, IB=1mA
IC=30mA, IB=3mA
IC=10mA, IB=10mA
IC=100mA, IB=10mA
IC=10mA, IB=1mA
IC=10mA, VCE=0.35V
IC=30mA, VCE=0.4V
IC=100mA, VCE=1V
IC=10mA, VCE=10V, f=100MHz
VCB=5V, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HPN2369A
HSMC Product Specification
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