HMBTH10 Просмотр технического описания (PDF) - Hi-Sincerity Microelectronics

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производитель

HMBTH10

NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Microelectronics 

HI-SINCERITY

MICROELECTRONICS CORP.

Characteristics Curve

Spec. No. : HN200101

Issued Date : 2000.02.01

Revised Date : 2002.10.25

Page No. : 2/3

Current Gain & Collector Current

1000

Current Gain & Collector Current

1000

100

100

hFE @ VCE=5V

hFE @ VCE=10V

10

0.1

1

10

100

Collector Current-IC (mA)

Saturation Voltage & Collector Current

1000

100

VCE(sat) @ IC=10IB

10

0.1

1

10

100

Collector Current-IC (mA)

On Voltage & Collector Current

1000

VBE(on) VCE=10V

10

0.1

1

10

100

Collector Current-IC (mA)

10000

Cutoff Frequency & Collector Current

1000

100

fT @ VCE=10V

10

1

0.1

1

10

100

Collector Current-IC (mA)

HMBTH10

100

0.1

1

10

100

Collector Current-IC (mA)

Capacitance & Reverae-Biased Voltage

10

1

COb

0.1

0.1

1

10

100

Reverae Biased Voltage (V)

HSMC Product Specification

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