HMPSA26 Просмотр технического описания (PDF) - Hi-Sincerity Microelectronics
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HMPSA26 Datasheet PDF : 3 Pages
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HI-SINCERITY
MICROELECTRONICS CORP.
HMPSA26
NPN SILICON TRANSISTOR
Description
The HMPSA26 is designed for using in darligton transistor.
Spec. No. : HE6308-B
Issued Date : 1992.09.09
Revised Date : 2000.10.01
Page No. : 1/3
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ 50 V
VCES Collector to Emitter Voltage...................................................................................... 50 V
VEBO Emitter to BASE Voltage .......................................................................................... 10 V
IC Collector Current ....................................................................................................... 500 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
50
-
BVCES
50
-
BVEBO
10
-
ICBO
-
-
ICES
-
-
IEBO
-
-
*VCE(sat)
-
-
VBE(on)
-
0.6
*hFE1
10K
-
*hFE2
10K
-
Max.
-
-
-
100
500
100
1.5
2
-
-
Unit
Test Conditions
V
IC=100uA, IE=0
V
IC=100uA, VBE=0
V
IE=10uA, IC=0
nA VCB=40V, IE=0
nA VCE=40V, VBE=0
nA VEB=10V, IC=0
V
IC=100mA, IB=100uA
V
VCE=5V, IC=100mA
VCE=5V, IC=10mA
VCE=5V, IC=100mA
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
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