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R3612

PROGRAMMABLE OVERVOLTAGE PROTECTOR FOR ERICSSON COMPONENTS 3357/3 DCLIC

Power Innovations Ltd 

R3612

PROGRAMMABLE OVERVOLTAGE PROTECTOR

FOR ERICSSON COMPONENTS 3357/3 DCLIC

DECEMBER 1995 - REVISED SEPTEMBER 1997

general

DEVICE PARAMETERS

Thyristor based over voltage protectors, for telecommunications equipment, became popular in the late

1970s. These were fixed voltage breakover triggered devices, likened to solid state gas discharge tubes. As

these were new forms of thyristor, the existing thyristor terminology did not cover their special characteristics.

This resulted in the invention of new terms based on the application usage and device characteristic. Initially,

there was a wide diversity of terms to describe the same thing, but today the number of terms have reduced

and stabilised. Information on fixed voltage over voltage protector terms, symbols and their definitions is given

in the publication SLPDE05, “Over-voltage Protection For Telecommunication Systems - Data Manual and

Application Information”, pp 1-4 to 1-6, Texas Instruments Limited, Bedford, 1994.

Programmable, (gated), over voltage protectors are relatively new and require additional parameters to

specify their operation. Similarly to the fixed voltage protectors, the introduction of these devices has resulted

in a wide diversity of terms to describe the same thing. This section has a list of alternative terms and the

parameter definitions used for this data sheet. In general, the Texas Instruments approach is to use terms

related to the device internal structure, rather than its application usage as a single device may have many

applications each using a different terminology for circuit connection.

terms, definitions and symbols

Thyristor over voltage protectors have substantially different characteristics and usage to the type of thyristor

covered by IEC 747-6. These differences necessitate the modification of some characteristic descriptions and

the introduction of new terms. Where possible terms are used from the following standards.

IEC 747-1:1983, Semiconductor devices - Discrete devices and integrated circuits - Part 1: General

IEC 747-2:1983, Semiconductor devices - Discrete devices and integrated circuits - Part 2: Rectifier Diodes

IEC 747-6:1983, Semiconductor devices - Discrete devices and integrated circuits - Part 6: Thyristors

main terminal ratings

Repetitive Peak Off-State Voltage, VDRM

Rated maximum (peak) instantaneous voltage that may be applied in the off-state conditions including all d.c.

and repetitive voltage components.

Repetitive Peak On-State Current, ITRM

Rated maximum (peak) value of a.c. power frequency on-state current of specified waveshape and frequency

which may be applied continuously.

Non-Repetitive Peak On-State Current, ITSM

Rated maximum (peak) value of a.c. power frequency on-state surge current of specified waveshape and

frequency which may be applied for a specified time or number of a.c. cycles.

Non-Repetitive Peak Pulse Current, ITSP

Rated maximum value of peak impulse pulse current of specified amplitude and waveshape that may be

applied.

Non-Repetitive Peak Forward Current, IFSM

Rated maximum (peak) value of a.c. power frequency forward surge current of specified waveshape and

frequency which may be applied for a specified time or number of a.c. cycles.

PRODUCT INFORMATION

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