IW4027B Просмотр технического описания (PDF) - IK Semicon Co., Ltd
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IW4027B Datasheet PDF : 6 Pages
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IW4027B
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
VCC DC Supply Voltage (Referenced to GND)
VIN DC Input Voltage (Referenced to GND)
IIN
DC Input Current, per Pin
PD Power Dissipation in Still Air, Plastic DIP, SOIC
Package
-0.5 to +20
V
-0.5 to VCC +0.5
V
±10
mA
500**
mW
Ptot Power Dissipation per Output Transistor
Tstg Storage Temperature
100
mW
-65 to +150
°C
TL
Lead Temperature, 1 mm from Case for 10 Seconds
260
°C
(Plastic DIP or SOIC Package)
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
**Derating: - Plastic DIP from -55 to +100°C
- SOIC Package from -55 to +65°C
- Plastic DIP: - 10 mW/°C from +100 to +125°C
- SOIC Package: : - 7 mW/°C from +65 to +125°C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
VCC
DC Supply Voltage (Referenced to GND)
VIN
DC Input Voltage (Referenced to GND)
TA
Operating Temperature, All Package Types
Min Max Unit
3.0
18
V
0
VCC
V
-55
+125
°C
This device contains protection circuitry to guard against damage due to high static voltages or electric fields.
However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this
high-impedance circuit. For proper operation VIN
should be constrained to the range
GND≤VIN ≤VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused
outputs must be left open.
Rev. 00
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