MB86342B Просмотр технического описания (PDF) - Fujitsu
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MB86342B Datasheet PDF : 19 Pages
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MB86342B
2. DC Characteristics
Parameter
Symbol
Condition
Power supply current
“H”-level input voltage
“L”-level input voltage
“H”-level output voltage
“L”-level output voltage
Input leakage current *2
(Tri-state pin Input)
Pull up/down resistance
Output short-circuit current
IDDS
Standby mode *1
IDD
Operating mode
VIH
—
VIL
—
IOH = –4mA
VOH
IOH = –8mA
IOL = 4mA
VOL
IOL = 8mA
ILI
VI = 0–VDD
ILZ
RP
—
Type/condition
IO*3
Normal/IOL = 4mA
Normal/IOL = 8mA
( VDD = 3.0 to 3.6V, Vss = 0V, Ta = 0 to +70°C)
Value
Unit
Min.
Typ.
Max.
—
—
100
µA
—
160
240
mA
VDD × 0.7
—
VDD
V
Vss
— VSS × 0.2
V
VDD–0.5
—
VDD
V
VSS
—
0.4
V
–10
—
10
µA
–10
—
10
10
25
50
kΩ
VO = VDD
VO = 0V
+40
–40
mA
+80
–80
*1: VIH = VDD, VIL = VSS The memory is in the standby mode.
*2: If an Input buffer with pull-up/-down resistor is used, the input leakage current may exceed the above value.
*3: Maximum supply current at the short circuit of output VDD or VSS. For 1 second per LSI pin.
7
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