BS829 Просмотр технического описания (PDF) - General Semiconductor
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BS829 Datasheet PDF : 2 Pages
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BS829
DMOS Transistors (P-Channel)
SOT-23
.122 (3.1)
.118 (3.0)
.016 (0.4)
3
Top View
1
2
.037(0.95) .037(0.95)
FEATURES
♦ High input impedance
♦ Low gate threshold voltage
♦ Low drain-source ON resistance
♦ High-speed switching
♦ No minority carrier storage time
♦ CMOS logic compatible input
♦ No thermal runaway
♦ No secondary breakdown
.016 (0.4) .016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
Pin configuration
1 = Gate, 2 = Source, 3 = Drain
MECHANICAL DATA
Case: SOT-23 Plastic Package
Weight: approx. 0.008 g
Marking
S29
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage (pulsed)
Drain Current (continuous) at TSB = 50 °C
Power Dissipation at TSB = 50 °C
Junction Temperature
Storage Temperature Range
1) Device on fiberglass substrate, see layout
Symbol
–VDSS
–VDGS
VGS
– ID
Ptot
Tj
TS
Value
Unit
400
V
400
V
±20
V
70
mA
3501)
mW
150
°C
–65 to +150
°C
Inverse Diode
Max. Forward Current (continuous)
at Tamb = 25 °C
Forward Voltage Drop (typ.)
at VGS = 0 V, IF = 350 mA, Tj = 25 °C
4/98
Symbol
Value
Unit
IF
350
mA
VF
1.0
V
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