2N5013 Просмотр технического описания (PDF) - Solid State Devices, Inc.

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2N5013

0.5 AMP 800 – 1000 Volts NPN Transistor

Solid State Devices, Inc. 

Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

FEATURES:

• BVCER and BVCEO to 1000 volts

• Low Saturation Voltage

• Low Leakage at High Temperature

• High Gain, Low Saturation

• 200° C Operating, Gold Eutectic Die Attach

• 2N5010 thru 2N5012 Also Available, Contact Factory

• TX, TXV, and S-Level Screening Available

2N5013 thru 2N5015

0.5 AMP

800 – 1000 Volts

NPN Transistor

Maximum Ratings

Collector – Emitter Voltage (RBE = 1KΩ)

Collector – Base Voltage

Emitter – Base Voltage

Peak Collector Current

Peak Base Current

Total Device Dissipation @ TC = 100º C

Derate above 100º C

Operating and Storage Temperature

Thermal Resistance, Junction to Case

CASE OUTLINE: TO-5

PIN 1: EMITTER

PIN 2: BASE

PIN 3: COLLECTOR

2N5013

2N5014

2N5015

2N5013

2N5014

2N5015

Symbol

VCER

VCBO

VEBO

IC

IB

PD

Tj, Tstg

RθJC

Value

800

900

1000

800

900

1000

5

0.5

50

2.0

20

-65 to +200

50

Units

V

V

V

A

mA

W

mW/ºC

ºC

ºC/W

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: TR0043A

DOC

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