HBAS16 Просмотр технического описания (PDF) - Hi-Sincerity Microelectronics
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HBAS16 Datasheet PDF : 3 Pages
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6833
Issued Date : 1994.05.27
Revised Date : 2002.10.24
Page No. : 1/3
HBAS16
HIGH-SPEED SWITCHING DIODE
Description
• The HBAS16 is designed for high-speed switching application in
hybrid thick and thin-film circuits.
• The devices is manufactured by the silicon epitaxial planar process
and packed in a plastic surface mount package.
SOT-23
Features
• Small SMD Package (SOT-23)
• Low Forward Voltage
• Fast Reverse Recovery Time
• Small Total Capacitance
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature .............................................................................................. -65~+150 °C
Junction Temperature .................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 200 mW
• Maximum Voltages and Currents (Ta=25°C)
Reverse Voltage .................................................................................................................. 75 V
Repetitive Reverse Voltage ................................................................................................. 85 V
Forward Current ............................................................................................................. 250 mA
Repetitive Forward Current ........................................................................................... 500 mA
Forward Surge Current (1ms)................................................................................................ 1 A
Characteristics (Ta=25°C)
Characteristic
Reverse Breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
Symbol
V(BR)
VF(1)
VF(2)
VF(3)
VF(4)
IR
CT
Trr
Condition
IR=100uA
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=75V
VR=0, f=1MHZ
IF=IR=10mA, RL=100Ω,
measured at IR=1mA
Min Max. Unit
75
-
V
-
715 MV
-
855 mV
- 1000 mV
- 1250 mV
-
1
uA
-
2
pF
-
6
nS
HBAS16
HSMC Product Specification
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