BDS20SMD Просмотр технического описания (PDF) - Semelab - > TT Electronics plc
Номер в каталоге
Компоненты Описание
производитель
BDS20SMD Datasheet PDF : 2 Pages
| |||
SILICON EPIBASE NPN
DARLINGTON TRANSISTOR
BDS20SMD
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
VCB = 80V
IE = 0
ICBO
Collector-Cut-Off Current
VCB = 60V
IE = 0
TC = 150°C
ICEO
Collector-Cut-Off Current
VCE = 40V
IB = 0
IEBO
Emitter-Cut-Off Current
VEB = 5V
IC = 0
hFE(1)
Forward-current transfer
ratio
IC = 0.5A
IC = 3A
VCE = 3V
VCE = 3V
VCE(sat)(1)
VBE(sat)(1)
VBE(on)(1)
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
Base-Emitter On Voltage
IC = 3A
IC = 5A
IC = 5A
IC = 3A
IB = 12mA
IB = 20mA
IB = 20mA
VCE = 3V
DYNAMIC CHARACTERISTICS
fT
Transition Frequency
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
MECHANICAL DATA
Dimensions in mm (inches)
IC = 0.5A
f = 2MHz
VCE = 4V
0.89
(0.035)
min.
3.70 (0.146)
3.41 (0.134)
3.70 (0.146)
3.41 (0.134)
Min. Typ Max. Units
0.2
1000
1000
1.0
mA
0.5
2
2
4
V
2.8
3.5
8
MHz
3.60 (0.142)
Max.
1
3
2
SMD1 (TO-276AB)
Underside View
9.67 (0.381)
9.38 (0.369)
11.58 (0.456)
11.28 (0.444)
Pad 1 – Base
Pad 2 – Collector Pad 3 - Emitter
0.50 (0.020)
0.26 (0.010)
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 8217
Website: http://www.semelab-tt.com
Issue 1
Page 2 of 2
Share Link: 