SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4582
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=7.5A;IB=1.5 A
VBEsat
Base-emitter saturation voltage
IC=7.5A;IB=1.5 A
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A;IB=0
IEBO
Emitter cut-off current
At rated voltage
ICBO
Collector cut-off current
ICEO
Collector cut-off current
At rated voltage
hFE-1
DC current gain
IC=7.5 A ; VCE=5V
hFE-2
DC current gain
IC=1mA ; VCE=5V
fT
Transition frequency
IC=1.5A ; VCE=10V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=7.5A;RL=20B
IB1=1.5A; IB2=3A
VBB2=4V
MIN TYP. MAX UNIT
1.0
V
1.5
V
450
V
0.1
mA
0.1
mA
10
5
20
MHz
0.5
µs
2.0
µs
0.2
µs
2