DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

MOC3041S-M(2005) Просмотр технического описания (PDF) - Fairchild Semiconductor

Номер в каталоге
Компоненты Описание
производитель
MOC3041S-M Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
Zero Crossing Characteristics (TA = 25°C Unless otherwise specified.)
Characteristics
Test Conditions
Symbol Device
Inhibit Voltage
IF = rated IFT, MT1-MT2 voltage
VIH
All
above which device will not trigger
off-state
Leakage in Inhibited State IF = rated IF , rated VDRM, off-state
I DRM2
All
Min
Typ
Max
20
500
Units
V
µA
Note
1. Test voltage must be applied within dv/dt rating.
2. All devices are guaranteed to trigger at an IF value less than or equal to max IFT. Therefore, recommended operating IF lies between max IFT
(15 mA for MOC3031M & MOC3041M, 10 mA for MOC3032M & MOC3042M, 5 mA for MOC3033M & MOC3043M) and absolute max IF (60 mA).
3. This is static dv/dt. See Figure 9 for test circuit. Commutating dv/dt is a function of the load-driving thyristor(s) only.
3
MOC3031M, MOC3032M, MOC3033M, MOC3041M, MOC3042M, MOC3043M Rev. 1.0.1
www.fairchildsemi.com

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]