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LC82101 Просмотр технического описания (PDF) - SANYO -> Panasonic

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LC82101 Datasheet PDF : 5 Pages
1 2 3 4 5
Sample Application Circuit
LC82101
1. C1: Use a 0.01 µF laminated ceramic capacitor.
2. Set up the polarity of the image signal from the sensor so that white data is represented by the highest potential and
black data by the lowest potential. A level conversion circuit can allow the whole dynamic range of the built-in A/D
converter to be used effectively if the maximum output level of the peaks in the image signal from the sensor does
not reach 4.2 V.
3. When a 64 K SRAM is used as the distortion correction memory, leave MA11 and MA12 unused and connect MA13
and MA14 to the memory A11 and A12 lines.
4. Although AGND and DGND are completely isolated internally in this LSI, AVDD and DVDD are connected through
the substrate. Therefore, the power supply system must be designed so that no potential difference between AVDD
and DVDD can occur. Also, when power is applied or removed, the time lag between the power supplies must be
under 3 ms.
No. 4982-4/5

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