CP608 Просмотр технического описания (PDF) - Central Semiconductor Corp
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CP608 Datasheet PDF : 2 Pages
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PROCESS CP608
Power Transistor
PNP - Amp/Switch Transistor Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
EPITAXIAL PLANAR
66 x 66 MILS
12.5 ± 1.0 MILS
12 x 24 MILS
11 x 14 MILS
Al - 50,000Å
Cr/Ni/Ag - 16,000Å
GROSS DIE PER 4 INCH WAFER
2,630
PRINCIPAL DEVICE TYPES
CJD32C
TIP32C
BACKSIDE COLLECTOR
w w w. c e n t r a l s e m i . c o m
R4 (22-March 2010)
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