SFT825Z-S Просмотр технического описания (PDF) - SEOUL SEMICONDUCTOR
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SFT825Z-S Datasheet PDF : 18 Pages
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3. Electric & Optical characteristics
Parameter
Symbol Condition Min
Forward Voltage
Reverse Current
Luminance
Intensity *1
Luminance Flux
Peak Wavelength
Dominant
Wavelength
Spectral Bandwidth
Red
Green
Blue
Red
Green
Blue
Red
Green
Blue
Red
Green
Blue
Red
Green
Blue
Red
Green
Blue
Red
Green
Blue
Viewing Angle *3 R, G, B
Optical Efficiency
Thermal Resistance
(one chip on)
Red
Green
Blue
Red
Green
Blue
VF
IR
IV
ΦV
λP
λd
∆λ
2θ½
ηop
Rthja
IF =20mA
IF =20mA
IF =20mA
VR=10V
(per die)
IF =20mA
(per chip)
IF =20mA
(per chip)
IF =20mA
IF =20mA
IF =20mA
IF =20mA
IF =20mA
IF =20mA
IF =20mA
IF =20mA
IF =20mA
IF =20mA
(per die)
IF =20mA
(per chip)
IF =20mA
IF =20mA
IF =20mA
1.8
3.0
3.0
-
-
-
-
-
-
-
-
-
-
-
-
620
520
455
-
-
-
-
-
-
-
-
-
-
(Ta=25ºC)
Typ Max Unit
2.1
3.2
3.2
-
-
-
700
1200
400
1.7
2.8
0.93
632
518
453
623
527
460
14
33
23
120
41
44
15
278
277
220
2.3
3.8
3.6
1
1
1
1100
1600
560
-
-
-
-
-
-
625
535
465
-
-
-
-
-
-
-
-
-
-
V
µA
mcd
lm
nm
nm
nm
deg.
lm/W
K/W
*1 The luminous intensity IV was measured at the peak of the spatial pattern which may not be aligned
with the mechanical axis of the LED package.
Luminous Intensity Measurement allowance is ±10%
*2 Please refer to CIE 1931 chromaticity diagram
*3 2 ½ is the off-axis where the luminous intensity is 1/2 of the peak intensity.
[Note] All measurements were made under the standardized environment of SSC.
Rev. 07
April 2009
www.acriche.com
Document No. : SSC-QP-7-07-24 (Rev.00)
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