SFT8600 Просмотр технического описания (PDF) - Solid State Devices, Inc.
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SFT8600 Datasheet PDF : 2 Pages
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Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFT8600
Electrical Characteristic
Collector – Emitter Breakdown Voltage
(IC= 10mAdc)
(IC= 20µAdc, RBE = 1KΩ)
Collector–Base Breakdown Voltage
(IC= 20µAdc)
Emitter–Base Breakdown Voltage
(IE= 20µAdc)
Collector Cutoff Current
(VCB= 800V)
(VCB= 800V @ TC= 150°)
Collector Cutoff Current
(VCE= 400 Vdc)
Emitter Cutoff Current
(VEB= 4V)
DC Current Gain* (IC= 100mAdc, VCE= 5Vdc, TC= -55°)
(IC= 5mAdc, VCE= 5Vdc)
(IC= 10mAdc, VCE= 5Vdc)
(IC= 100mAdc, VCE= 5Vdc)
(IC= 250mAdc, VCE= 5Vdc)
Collector – Emitter Saturation Voltage*
(IC= 20mAdc, IB= 2mAdc)
(IC= 100mAdc, IB=10mAdc)
Base – Emitter Saturation Voltage *
(IC= 20mAdc, IB= 2mAdc)
(IC=100mAdc, IB=10mAdc)
Current Gain Bandwidth Product
(IC= 100mAdc, VCE= 10Vdc, f= 10MHz)
Output Capacitance
(VCB= 20Vdc, IE= 0 Adc, f= 1.0MHz)
Delay Time
Rise Time
Storage Time
Fall Time
(VCC = 125Vdc,
IC = 100 mAdc,
IB1 = 20 mAdc,
IB2 = 40 mAdc)
* Pulse Test: Pulse Width = 300 µS, Duty Cycle = 2%
Symbol
BVCEO
BVCER
BVCBO
BVEBO
Min
400
1000
1000
6
ICBO
––
ICEO
––
IEBO
––
10
30
40
hFE
20
15
VCE(Sat)
––
––
VBE(Sat)
––
––
fT
8.0
Cob
––
td
tr
---
ts
tf
---
Max
Units
––
V
––
V
––
V
10
500
µAdc
10
µAdc
1
µAdc
200
––
0.3
0.5
Vdc
0.8
1.0
Vdc
––
MHz
15
pF
50
nsec
150
nsec
3
µsec
800
nsec
For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.
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