BC856S Просмотр технического описания (PDF) - NXP Semiconductors.
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BC856S Datasheet PDF : 12 Pages
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NXP Semiconductors
BC856S
65 V, 100 mA PNP/PNP general-purpose transistor
500
hFE
400
(1)
300
(2)
200
(3)
100
006aab429
−0.20
IC
(A)
−0.15
−0.10
−0.05
IB (mA) = −5.0
−4.0
−3.0
−2.0
−1.0
006aab430
−4.5
−3.5
−2.5
−1.5
−0.5
0
−10−1
−1
−10
−102
−103
IC (mA)
0
0
−1
−2
−3
−4
−5
VCE (V)
VCE = −5 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 4. Per transistor: DC current gain as a function of
collector current; typical values
Fig 5.
Tamb = 25 °C
Per transistor: Collector current as a function
of collector-emitter voltage; typical values
−1.2
VBE
(V)
−1.0
−0.8
006aab431
(1)
(2)
−1.2
VBEsat
(V)
−1.0
−0.8
006aab432
(1)
(2)
−0.6
(3)
−0.4
−0.6
(3)
−0.4
−0.2
−10−1
−1
−10
−102
−103
IC (mA)
VCE = −5 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 6. Per transistor: Base-emitter voltage as a
function of collector current; typical values
−0.2
−10−1
−1
−10
−102
−103
IC (mA)
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 7.
Per transistor: Base-emitter saturation voltage
as a function of collector current; typical
values
BC856S_2
Product data sheet
Rev. 02 — 19 February 2009
© NXP B.V. 2009. All rights reserved.
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